Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
xiamen,fujian,China., March 5, 2014 - (PressReleasePoint) - 2" GaN HEMT Epitaxial Wafers
We offer 2" GaN HEMT Wafers, the structure is as follows:
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.
Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.
Explanation of AlGaN/Al/GaN HEMTs:
Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.
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