Gallium Nitride(GaN) HEMT epitaxial wafer

Printing form Array ( [#action] => /gallium-nitridegan-hemt-epitaxial-wafer?destination=node%2F724526 [#id] => user-login-form [#validate] => Array ( [0] => user_login_name_validate [1] => user_login_authenticate_validate [2] => user_login_final_validate ) [#submit] => Array ( [0] => user_login_submit ) [name] => Array ( [#type] => textfield [#title] => Username [#maxlength] => 60 [#size] => 15 [#required] => 1 ) [pass] => Array ( [#type] => password [#title] => Password [#maxlength] => 60 [#size] => 15 [#required] => 1 ) [submit] => Array ( [#type] => submit [#value] => Log in ) [links] => Array ( [#value] => ) [#parameters] => Array ( [0] => user_login_block [1] => Array ( [storage] => [submitted] => [post] => Array ( ) ) ) [#build_id] => form-xmLszjxFRS2x4lM1enr7tmCMKddSKyZ_UfYXetks2c0 [#type] => form [#programmed] => [form_build_id] => Array ( [#type] => hidden [#value] => form-xmLszjxFRS2x4lM1enr7tmCMKddSKyZ_UfYXetks2c0 [#id] => form-xmLszjxFRS2x4lM1enr7tmCMKddSKyZ_UfYXetks2c0 [#name] => form_build_id ) [form_id] => Array ( [#type] => hidden [#value] => user_login_block [#id] => edit-user-login-block ) [#description] => [#attributes] => Array ( ) [#required] => [#tree] => [#parents] => Array ( ) [#method] => post [#after_build] => Array ( [0] => ckeditor_process_form [1] => ctools_ajax_form_after_build ) )
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Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.


xiamen,fujian,China., March 5, 2014 - (PressReleasePoint) -
2" GaN HEMT Epitaxial Wafers
 
We offer 2" GaN HEMT Wafers, the structure is as follows:
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
AlxGa1-xN (18~40nm)
AlN(buffer layer)
un-doped GaN(2~3um)
Sapphire substrate
 
* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.
 
AlGaN/GaN HEMT Epi Wafer on sapphire/GaN
 

Layer ID Layer Name Material Al Content(%) Dopant Thickness(nm)
0 Substrate GaN or Sapphire
1 Nucleation Layer Various,AlN 100 DID
2 Buffer Layer GaN 0 NID 1800
3 Spacer AlN 100 NID 1
4 Schottky Barrier AlGaN 20 or 23 or 26 NID 21

 
2"AlGaN/GaN on sapphire
 
For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.
 
Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.
 
Explanation of AlGaN/Al/GaN HEMTs:
 
Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.
 
Related Classification:
 
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Source:PAM-XIAMEN
 
If you need more information about GaN HEMT epitaxial wafer,please visit our website:http://www.powerwaywafer.com, send us email at victorchan@powerwaywafer.com or powerwaymaterial@gmail.com.


Press Contact:
Victor Chan
Anling,Huli Developing Zone
86-592-5601404
**********@q**l**y**t**i**.net
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Contact Victor Chan


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