Gallium Nitride(GaN) HEMT epitaxial wafer

powerwaywafer's picture
Printer-friendly versionPrinter-friendly versionPDF versionPDF version

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.


xiamen,fujian,China., March 5, 2014 - (PressReleasePoint) -
2" GaN HEMT Epitaxial Wafers
 
We offer 2" GaN HEMT Wafers, the structure is as follows:
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
AlxGa1-xN (18~40nm)
AlN(buffer layer)
un-doped GaN(2~3um)
Sapphire substrate
 
* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.
 
AlGaN/GaN HEMT Epi Wafer on sapphire/GaN
 

Layer ID Layer Name Material Al Content(%) Dopant Thickness(nm)
0 Substrate GaN or Sapphire
1 Nucleation Layer Various,AlN 100 DID
2 Buffer Layer GaN 0 NID 1800
3 Spacer AlN 100 NID 1
4 Schottky Barrier AlGaN 20 or 23 or 26 NID 21

 
2"AlGaN/GaN on sapphire
 
For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.
 
Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.
 
Explanation of AlGaN/Al/GaN HEMTs:
 
Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.
 
Related Classification:
 
algan/gan hemt, algan/gan hemt band diagram, algan/gan hemt based biosensor, algan gan hemt phd thesis, algan/gan hemt based liquid sensors, algan/gan hemt reliability, algan/gan hemt with 300-ghz, algan gan hemts an overview of device, algan gan hemt characterization, algan/gan hemts with an ingan-based back-barrier, aln/gan hemt, algan/aln/gan hemt, inaln/aln/gan hemt, aln passivation gan hemt.
 
Source:PAM-XIAMEN
 
If you need more information about GaN HEMT epitaxial wafer,please visit our website:http://www.powerwaywafer.com, send us email at victorchan@powerwaywafer.com or powerwaymaterial@gmail.com.


Press Contact:
Victor Chan
Anling,Huli Developing Zone
86-592-5601404
http://www.powerwaywafer.com
**********@q**l**y**t**i**.net
Email partially hidden to block spam. Please use the contact form here.
Contact Victor Chan
Email the contact person for this press release. Do not send spam or irrelevant message.
4 + 8 =


Copy this html code to your website/blog to embed this press release.

Comments

Post new comment

16 + 0 =