NXP Introduces Industry’s First Bipolar Transistors in LFPAK56 (Power SO-8)

NXP's picture
Printer-friendly versionPrinter-friendly version

New portfolio of automotive-qualified transistors offers DPAK-like thermal and electrical performance – on just half the footprint

Eindhoven, Netherlands and Hamburg, Germany, February 13, 2014 – NXP Semiconductors N.V. (NASDAQ: NXPI), today introduced the first bipolar transistors in the 5-mm x 6-mm x 1-mm low profile LFPAK56 (SOT669) SMD power plastic package. The new portfolio consists of six 60 V and 100 V low saturation transistors with a collector current of up to 3 A (IC) and a peak collector current (ICM) of up to 8 A. The new types boost power dissipation capabilities of 3 W (Ptot) and low VCEsat values – a thermal and electrical performance comparable to bipolar transistors in much larger power packages such as DPAK, on less than half the footprint.

The solid copper clip and collector tab design of the NXP LFPAK package is the basis for achieving this high power density, as it reduces the package’s electrical and thermal resistance significantly. The LFPAK also eliminates wire-bonding used in many competitor DPAK types, enabling NXP to deliver higher mechanical ruggedness and reliability.

The new LFPAK56 bipolar transistors are AEC-Q101 qualified and suitable for a wide range of automotive applications in an ambient temperature of up to 175°C. Backlighting, motor drive and general power management applications are further areas of use for these new low VCEsat transistors. The new bipolar transistor portfolio will be extended over the course of the year with double transistors in LFPAK56D and high current types with 6, 10 and 15 A in LFPAK56.

“We believe that NXP’s LFPAK will become the standard in compact power packages for bipolar transistors – just as NXP LFPAK is the industry benchmark for MOSFETs today,” said Joachim Stange, product manager, transistors, NXP Semiconductors. “The automotive market in particular is asking for bipolar transistors with this packaging option to take the next step in developing modules where small size, high power density and efficiency are key.


The new bipolar low VCEsat transistors in LFPAK56 are available immediately in high-volume production, including product types PHPT60603NY/PHPT60603PY, PHPT61003NY/PHPT61003PY, and PHPT61002NYC/PHPT61002PYC.

The double transistors in LFPAK56D and high current single types with 6, 10 and 15 A will be released from Q2 2014 onward.


About NXP Semiconductors

NXP Semiconductors N.V. (NASDAQ: NXPI) creates solutions that enable secure connections for a smarter world. Building on its expertise in High Performance Mixed Signal electronics, NXP is driving innovation in the automotive, identification and mobile industries, and in application areas including wireless infrastructure, lighting, healthcare, industrial, consumer tech and computing. NXP has operations in more than 25 countries, and posted revenue of $4.82 billion in 2013. Find out more at www.nxp.com.

News Source : NXP Introduces Industry’s First Bipolar Transistors in LFPAK56 (Power SO-8)

Copy this html code to your website/blog to embed this press release.


Post new comment

4 + 0 =

To prevent automated spam submissions leave this field empty.
Page execution time was 1212.66 ms.

Memory usage:

Memory used at: devel_init()=2.13 MB, devel_shutdown()=22.57 MB.