TOSHIBA Develops High Speed NANO FLASH™-100 Flash Memory for ARM Core Based Microcontrollers

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February 4, 2013

TOKYO-Toshiba Corporation (TOKYO: 6502) today announced that it has developed NANO FLASH™-100 much faster access for embedded microcontrollers, based on Toshiba's original NANO FLASH™.

Development background:

The rich functionality and high speed capabilities of embedded microcontrollers require much flash memory with much faster access rates. Toshiba has recognized and responded to this by developing NANO FLASH™ which merges two features: high speed programming, based on NAND flash memory cell device technology; and NOR flash memory circuit technology. Toshiba has subsequently brought this high level performance to its original microcontrollers and to ARM core-based microcontrollers. Now, as more users use ARM core-based microcontrollers, there is an emerging need for greater speed and large memory capacities. NANO FLASH™-100 is highly suited to this market.

Features:

• The newly developed NANO FLASH™-100 achieves a zero-wait cycle during random access at 100MHz operation ^{(note 1)}, the industry's top class. This allows the core in ARM-based microcontrollers to fully utilize the superior performance and code density of applications requiring high speed and large capacity memory.
• Using the ultra low power technology of NANO FLASH™ microcontrollers, a wide range of high speed, low power applications developments are available.

Toshiba will follow up on its first NANO FLASH™-100 product, TMPM440F10XBG, with additional ARM core-based products and will continue the proactive development of flash memory technologies for embedded microcontrollers.

 

• Note 1: Based on Toshiba's research in flash memory for embedded microcontrollers　(as of January 2013)
• Note 2: ARM and Cortex are trademarks or registered trademarks of ARM Limited in the EU and other countries.
• Note 3: NANO FLASH is a trademark of Toshiba Corporation.

 

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